Seven preparation technologies for ceramic substrates(5)

Seven preparation technologies for ceramic substrates(5)

2021-11-12 15:41:23 4

The low curing temperature of the aluminosilicate slurry has minimal impact on the line layer of the DPC ceramic substrate and is compatible with the DPC substrate preparation process. The rubber is easy to process, easy to demold, and inexpensive, and can accurately replicate the shape and size of the dam structure (cavity) to ensure the accuracy of dam processing. The experimental results show that the processing error of cavity depth and diameter is less than 30 μm, which indicates that the 3D ceramic substrate prepared by this process is highly accurate, reproducible and suitable for mass production. The aluminosilicate slurry is heated and dehydrated and condensed, and the main product is inorganic polymer, which has good heat resistance, thermal expansion coefficient matching the ceramic substrate and good thermal stability; the cured body has high bonding strength with ceramics and metals, and the prepared 3D ceramic substrate is highly reliable. The thickness of the surrounding dam (cavity height) depends on the thickness of the mold and is theoretically unlimited, which can meet the requirements of different structures and sizes of electronic devices packaging.


Table 3 compares some basic properties of the different 3D ceramic substrate properties described above. Data that duplicate or are similar to Table 2 are not included.

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 Ceramic substrate development trend analysis


Ceramic substrate integration: In general, TPC, DBC and AMB ceramic substrates are only suitable for the preparation of single-sided line layer (or double-sided line layer, but the upper and lower layers do not conduct). The HTCC/LTCC substrates are prepared by sintering after stacking (aligning the metal vias) with multiple layers of embryos, thus enabling vertical interconnection within the substrate and improving package integration, but the resistivity of HTCC/LTCC substrates is high. DPC ceramic substrates can be prepared by laser punching (generally 60 μm ~ 120 μm) and electroplated hole-filling technology to produce metal vias, which can realize vertical interconnection between the upper and lower circuit layers of ceramic substrates due to the dense copper pillars filled in the holes and excellent thermal conductivity. On this basis, the three-dimensional ceramic substrate can be prepared by plating and thickening techniques to obtain a three-dimensional ceramic substrate with a dam structure; if multiple DPC substrates are vertically integrated by soldering/bonding techniques, the multilayer ceramic substrate (MLC, Figure 37) can be further obtained to meet the demand for three-dimensional packaging and heterogeneous integration of power devices. The MLC (Figure 37) can be used to meet the demand for 3D packaging and heterogeneous integration of power devices.

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Ceramic substrate gradually to the high power, high integration, high precision, refinement party direction. The requirements for technology are getting higher and higher, and also speak to promote the ceramic substrate continuously upward.


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