Compound semiconductor materials such as gallium arsenide (GaAs) and indium phosphide (InP) are the basic materials of microelectronics and optoelectronics.
As the representative of the second generation of semiconductor materials, indium phosphide (InP) features high electro-optical conversion efficiency and high electron mobility, high working temperature, and strong anti-radiation ability which are widely used in the fields of optical communication, high-frequency millimeter wave, optoelectronic integrated circuits and solar cells for outer space.
According to Yole's market investigation, the global demand for 2-inch InP substrates will reach about 4 million in 2021, and the demand for 4-inch InP substrates will be about 1.05 million. By 2024, the InP market will reach 172 million US dollars’ demand with a compound annual growth rate of 14%.
InP is an important semiconductor material for laser transceivers and is upstream of the industry chain.
Lasers and receivers are the core components of optical modules that can perform the photoelectric signal conversion and are in the middle of the industry chain.
Cloud computing vendors represented by Amazon and Microsoft are in the optical communications industry whose application side of the company is downstream of the industrial chain.
In the 5G era, the optical communications industry is ushering in rapid development.
Changes in the network structure of 5G base stations increase the demand for optical modules.
Lasers and detectors are the key optoelectronic devices for optical modules.
Production capacity is expected to expand, which will further drive the growth of demand for InP, the core semiconductor material for optical communications.
The high-frequency and high-speed 5G networks require front-end RF components to have better performance at high frequencies and high power, which puts forward higher requirements for physical properties such as electron mobility and the working temperature of their semiconductor materials.
Signal receivers and amplifiers made by InP can work at extremely high frequencies above 100GHz, and have a wide bandwidth, which is less affected by external influences, and have high stability.
Therefore, InP will become the core semiconductor material for terminal equipment and front-end radiofrequency devices of base station equipment in the 5G era, ushering in a larger market space.
Gallium arsenide is the most important and widely used semiconductor material in compound semiconductors.
It is also the most mature and high-yielding compound semiconductor material.
As gallium arsenide has high electron mobility (5-6 times that of silicon), a large bandgap (it is 1.43eV, Si is 1.1eV), which is a direct bandgap, it is easy to be made into a semi-insulating material with intrinsically loaded Low current concentration and good photoelectric characteristics.
Devices made of gallium arsenide materials have good frequency response, fast speed, and high operating temperature, which can meet the needs of integrated optoelectronics.
We can use gallium arsenide semiconductor materials to prepare microwave devices, which play a key role in satellite data transmission, mobile communications, GPS global navigation, and other fields.
An important characteristic of gallium arsenide semiconductor material is its optoelectronic properties.
Because it has a direct bandgap (by absorbing or emitting photon energy, electrons directly transition from the valence band to the conduction band, thereby having higher luminous efficiency) and wide bandgap structure, its light emission efficiency is higher than that semiconductor materials such as silicon germanium.
It can not only be used to make light-emitting diodes, photodetectors but also semiconductor lasers, which are widely used in optical communications and other fields.
In addition, gallium arsenide semiconductor materials also have the property of high-temperature resistance, low power, etc., and are widely used in the field of satellite communications.
It is currently the most important optoelectronic material and the most important microelectronic material after silicon material.
It is suitable for manufacturing high-frequency, high-speed devices and circuits.
GRISH Polishing Slurry for Semiconductor
GRISH's new series of AO Polishing Slurry is professionally developed for back polishing of InP & GaAs Chips.
Compared to the competitor's Slurry, it features a high removal rate, better surface flatness (Ra, TTV, LTV), high qualification rate.
Recommend Polishing Process for InP & GaAs
First Step: Thinning, 15-30min, 3-10umAluminum oxide Powder & Quartz Plate;
Second Step: Backing Polishing, 30-40min;
InP: Semiconductor Polishing Slurry together with PU polishing Pad
GaAs: Semiconductor Polishing Slurry or CMP Polishing Slurry together with PU Polishing Pad.