Sapphire Wafer Details

2021-12-07 12:23:17 3

-Size: 2 inch, 4 inch, 6 inch and cut small piece C direction, M direction, R direction; single throw, double throw:

-Thickness: 100um, 280um, 300um, 350um, 430um, 500um, 650um, 1mm;

-Explanation:Sapphire is a single crystal of aluminum hydride, which is the second hardest material in nature, after diamond.

Sapphire has good light transmission, high strength, resistance to collision, wear resistance, corrosion resistance and resistance to high temperature and pressure, biocompatibility, and can be made into various shapes of objects, which is an ideal substrate material for making semiconductor optoelectronic devices.

-Application:Sapphire single crystal is an excellent multifunctional material. It can be widely used in many fields such as industry, national defense and scientific research (e.g. high temperature infrared window), and it is also a widely used single crystal substrate material, which is the preferred substrate for the current blue, violet and white light emitting diode (LED) and blue laser (LD) industries (need to epitaxy gallium nitride film layer on sapphire substrate), and is also an important superconducting thin film substrate. In addition to Y-series and La-series high-temperature superconducting films, it can also be used to grow new practical MqB2 (magnesium diboride) superconducting films.




  R(1-102) M(10-10)
 A (11-20) 



All C-axis have crystal lightness, other axes have negative lightness; C-face is flat and best cut.The R-axis is slightly harder to cut than the A-axis.The M side is stepped and serrated, not good for cutting, easy to cut and crack.The hardness of A direction is obviously higher than that of C direction, specifically in terms of wear resistance, scratch resistance and high hardness; the A surface is Z-shaped serrated surface, which is better for cutting.

C-oriented sapphire substrates are used to grow III-V and II-VI deposited films, such as GaN, which can yield blue LED products, laser diodes, and infrared detector applications.

This is mainly because of the mature process of growing sapphire crystals along the C-axis, the relatively low cost and stable physical and chemical properties, and the mature and stable technology of epitaxial crystallization on the C-plane.

R to the substrate growth of the different deposited silicon extrinsic extension crystals that are used in microelectronic integrated circuits.

In addition, high-speed integrated circuits and pressure sensors can be formed during the process of film fabrication on epitaxial silicon growth.

It can also be applied to R-type substrate growth for making emery, other superconducting components, high resistance resistors, and GaAs.

Mainly used to grow non-polar/semi-polar surface GaN epitaxial films to improve luminescence efficiency.

A-way substrates produce uniform capacitance dielectrics and are highly insulated for use in hybrid microelectronics.

High-temperature superconductors can be generated from A-substrate long crystals.



Patterned Sapphire Substrate atet Sasphire Substrate (PSS for short): By growth (Growth) or etching (Etching), the sapphire substrate is designed to produce a nano-level specific rules of microstructure patterns to control the output light form of LEDs, and processing capabilities can simultaneously reduce the disparity between the GaN grown on the sapphire substrate defects, improve epitaxial quality, enhance the internal quantum efficiency of LEDs, and increase light extraction efficiency. It can be processed into various structural parts such as sapphire prisms, mirrors, lenses, holes, and cones.



DensityHardnessMelting point



(visible and 

infrared wavelengths)


Transmittance (double polishing) 



3.98g/cm3 9(mohs)2053°C1.762-1.770 ≥85% 




C axi

s(9.4 at A axis)



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