Deep ultraviolet LED packaging ceramic substrates have high light output rate, good quantum quality, low operating temperature, and provide high power optical power density of deep ultraviolet LEDs, which also greatly improves the reliability of the device. I will briefly describe the structure and packaging method of deep UV LED packaging ceramic substrate.
A packaging support and packaging structure for deep ultraviolet LEDs
A package holder and package structure for deep ultraviolet LEDs. The package structure of deep ultraviolet LED includes deep ultraviolet LED chip, glass cover and package holder, the package holder includes ceramic substrate and enclosure, the ceramic substrate includes ceramic plate and metalized graphic layer arranged on the surface of ceramic plate, the enclosure is fixed on the top surface of ceramic substrate; the inner wall of the enclosure is metal inner wall, the metal inner wall includes reflector; the enclosure is fixed on the top surface of ceramic substrate by bonding layer or welding layer, When the dam is fixed on the top surface of the ceramic substrate by the bonding layer, the metal inner wall of the dam covers the inner circumference of the bonding layer. The deep UV LED chip is mounted on the line of the metallized graphic layer on the top surface of the ceramic plate, and the glass cover is welded to the top of the enclosure. The utility model can effectively export the ultraviolet light emitted by the chip out of the package, not only the light output rate of the package structure is high, but also the working temperature of the chip is low.
Deep UV LEDs based on high quality AlN templates
As the technology of blue LEDs based on InGaN material becomes more mature and widely used, more and more researchers gradually shift their research interest to shorter wavelength nitride LEDs - UV and even deep UV LEDs based on AlGaN material, UV LEDs have significant applications in fields such as biochemical detection, sterilization, polymer curing, wireless communication and white light illumination, and their potential market value is estimated to be in the billions of dollars. However, in terms of luminous power and efficiency, the current UV-LEDs are far from satisfactory. The best quantum efficiency of InGaN-based blue LEDs reported in the laboratory has exceeded 70%, compared to the much lower quantum efficiency of AlGaN-based UV-LEDs, especially for deep UV-LEDs in the UV-B (290-320 nm) and UV-C (200-290 nm) wavelength bands, where the quantum efficiency generally does not exceed 2%. An important reason for this problem is that it is difficult to epitaxially grow high quality AlGaN material, the higher the Al component, the greater the difficulty of epitaxial growth, the lower the crystal quality. The dislocation density in AlGaN epitaxial films grown by a typical two-step process is generally 1010/cm-2 or higher. The low crystal quality also increases the difficulty of AlGaN doping, which further leads to the low quantum efficiency. To address this problem, high quality AlGaN materials were obtained by epitaxial growth based on high temperature AlN templates, and deep UV LEDs were fabricated on this basis.
A high reliability high power UV LED integrated packaging method
High reliability high power UV LED integrated packaging method, first of all, the high thermal conductivity ceramic substrate as a support plate, and in the high thermal conductivity ceramic substrate at both ends of the fixed metal dam; then the large size of the silicon plate fixed on the high thermal conductivity ceramic substrate, UV LED chip fixed on the large size of the silicon plate; through the gold wire UV LED chip and metal electrodes and large size of the silicon plate electrical connection; finally in the metal Finally, the glass cover plate is fixed on the metal dam to complete the structure of the package. The invention adopts high thermal conductivity ceramic substrate combined with large size silicon plate and glass cover plate, and electrically connects the UV LED chip with metal electrode and large size silicon plate through gold wire to realize a high power integrated inorganic package structure for vertical, horizontal and flip-flop structure UV LED chip, which not only increases the optical power density but also greatly improves the reliability of the device.